High Performance Macroporous Silicon Chemical Sensor With Improved Phase Detection Electronics

Publications

Share / Export Citation / Email / Print / Text size:

International Journal on Smart Sensing and Intelligent Systems

Professor Subhas Chandra Mukhopadhyay

Exeley Inc. (New York)

Subject: Computational Science & Engineering, Engineering, Electrical & Electronic

GET ALERTS

eISSN: 1178-5608

DESCRIPTION

4
Reader(s)
15
Visit(s)
0
Comment(s)
0
Share(s)

VOLUME 1 , ISSUE 3 (September 2008) > List of articles

High Performance Macroporous Silicon Chemical Sensor With Improved Phase Detection Electronics

C. RoyChaudhuri * / S. Gangopadhyay / R. DevDas / S.K. Datta / H. Saha

Keywords : Macroporous Silicon, Stable electrical contacts, detection of chemicals, high sensitivity, low Q capacitance, portable

Citation Information : International Journal on Smart Sensing and Intelligent Systems. Volume 1, Issue 3, Pages 638-658, DOI: https://doi.org/10.21307/ijssis-2017-312

License : (CC BY-NC-ND 4.0)

Published Online: 13-December-2017

ARTICLE

ABSTRACT

In this paper, a high sensitive, stable and reproducible electrical chemical sensor system based on macroporous silicon has been developed. Screen printed metal contacts have been taken from macroporous silicon layer which result in extremely stable, quasi ohmic and reproducible contacts. Such a sensor structure has been characterized for different organic and ionic solutions commonly used for biochemical applications. The sensitivity of the reported sensor at a particular frequency has been found to be almost ten
times compared to previous reports of macroporous silicon sensor where contacts are taken from the backside and also in comparison to interdigited electrode array structure. The improvement and variation of sensitivity with frequency for different solutions has been explained taking into account the dependence of double layer impedance with frequency, distributed RC networks of the macroporous silicon structure, ionic conductivity of the solution and effects of ion sizes. However, from the impedance measurement it
has been observed that the sensor capacitance with such stable contacts has an ultra low-Q value and to exploit such sensor for portable field use systems, an embedded signal conditioning unit has been realized to display the measured capacitance value after offset compensation and reduction of parasitic effects.

Content not available PDF Share

FIGURES & TABLES

REFERENCES

[1] L.T.Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers”, Applied Phys. Lett.,1990, p 57.
[2] H. Ouyang, L. A. DeLouise, M. Christophersen, B. L. Miller, and P. M. Fauchet, Proc. of SPIE 5511,2004, p.71
[3] M.Archer, M.Christophersen, P.M.Fauchet, “Macroporous silicon electrical sensor for DNA hybridization detection”, Biomedical Microdevices, 2004, p.203.
[4] L.A.Balagurov, D.G.Yarkin, E.A.Petrova,“ Electronic transport in porous silicon of low porosity made on a p+ substrate”, Mater. Sci.Engg., 2000, p.127.
[5] S.J.Kim, S.H.Lee,C.J.Lee, “Organic vapour sensing by current response of porous silicon layer”,J.Phys.D: Appl. Phys., 2002, p.3505.
[6] M.Archer, M.Christophersen, P.M.Fauchet, “Electrical porous silicon chemical sensor for detection of organic solvents”, Sensors and Actuators B, 2005, p.347
[7] A.Motohashi, M.Ruike, M.Kawakami, H.Aoyagi, A.Kinoshita, A.Satou, “Identification of water molecules in low humidity and possibility of quantitative gas analysis using porous silicon gas sensor”, Jpn. J. Appl. Phys.,1996, p.4253
[8] A.Motohashi, M.Kawakami, H.Aoyagi, A.Kinoshita, A.Satou, “Gas identification by a single gas sensor using porous silicon as the sensitive material”, Jpn. J. Appl. Phys.,1995, p.5840
[9] K.Watanabe, T.Okada, I.Choe, Y.Sato, “Organic vapour sensitivity in a porous silicon device”, Sens.Actuat. B, 1996, p.194
[10] C.RoyChaudhuri,J.Kanungo,S.K.Dutta,S.RoyChaudhuri,S.Majhi and H.Saha , “Macroporous silicon as an electrical platform for biosensing applications”, 2nd International Conference on Sensing Technology, November 26-28,2007,Palmerston North, New Zealand ,pp 493-498.
[11] United States Patent 4965815,1990
[12]AFRICON, IEEE, Volume 2, 1999 pp. 927 - 928 vol.2
[13] J.Wu, J.Suls,W.Sansen, “Electrical Properties of Polysilicon Microelectrodes For Conductometric Measurement”, Electroanalysis, vol.12, no.7,2000, p.538.
[14] David A.Robinson, “The electrical properties of metal microelectrodes”, Proc. Of IEEE, vol.56, 1968,p.1065
[15] I.P.Bergveld Em, “ISFET Theory and Practise”, IEEE Sensor Conference, 2003, p.1.
[16] P.V.Gerwen, W.Laureyn, W.Laureys, G.Huyberechts, M.O.De Beeck,K.Baert, J.Suls, W.Sansen,P.Jacobs, L.Hermans, R.Mertens, “ Nanoscaled interdigitated electrode arrays for biochemical sensors”, Sensors and Actuators B, vol.49, 1998, pp.73-80.
[17] Jiangfeng Wu; Fedder, G.K.; Carley, L.R., “A low-noise low-offset capacitive sensing amplifier for a 50-/spl mu/g//spl radic/Hz monolithic CMOS MEMS accelerometer”. IEEE Journal of Solid-State Circuits, vol.39,2004,pp. 722-730.
[18] Harrison, R.R.; Charles, C., “A low-power low-noise CMOS amplifier for neural recording applications”,IEEE Journal of Solid-State Circuits, vol. 38, 2003,pp.58-965
[19] Lovell-Smith J.W. and Hall B. D. (2006) "A new tool for the automatic propagation of uncertainty in instrumentation and analytic systems" 5th International Symposium on Humidity and Moisture – ISHM 2006
[20] Ferran Reverter, Xiujun Li and Gerard C M Meijer, “A novel interface circuit for grounded capacitive sensors with feedforward-based active shielding”, Measurement Science and Technology, vol.19,2008, issue 2, no.025202
[21] M K Gunasekaran, E S R Gopal, S Jyothi and Chandrasekhara Shetty, “Measurement of dielectric constant of conducting liquids”, Journal of Physics E: Scientific Instruments, vol.14, 1981, p.381
[23] S. Pilla, J. A. Hamida, and N. S. Sullivan, “Very high sensitivity ac capacitance bridge for the dielectric study of molecular solids at low temperatures”, Review of Scientific Instruments,vol.70,1999, p.4055.
[24] www. intersil.com(chip no.HA-2840)
[25] www.national semiconductor.com(LH0024)

EXTRA FILES

COMMENTS