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International Journal on Smart Sensing and Intelligent Systems

Professor Subhas Chandra Mukhopadhyay

Exeley Inc. (New York)

Subject: Computational Science & Engineering , Engineering, Electrical & Electronic


eISSN: 1178-5608



VOLUME 1 , ISSUE 3 (September 2008) > List of articles


M. Shafiei * / K. Kalantar-zadeh / W. Wlodarski / E. Comini / M. Ferroni / G. Sberveglieri / S. Kaciulis / L. Pandolfi

Keywords : Gas sensor, Hydrogen, Nanowires, SnO2, MOS, Schottky, XPS, TEM, SEM.

Citation Information : International Journal on Smart Sensing and Intelligent Systems. Volume 1, Issue 3, Pages 771-783, DOI: https://doi.org/10.21307/ijssis-2017-319

License : (CC BY-NC-ND 4.0)

Published Online: 13-December-2017



This paper presents material and gas sensing properties of Pt/SnO2 nanowires/SiC metal oxide semiconductor devices towards hydrogen. The SnO2 nanowires were deposited onto the SiC substrates by vapor-liquid-solid growth mechanism. The material properties of the sensors were investigated using scanning electron microscopy, transmission electron microscopy and X-ray
photoelectron spectroscopy. The current-voltage characteristics have been analyzed. The effective change in the barrier height for 1% hydrogen was found to be 142.91 meV. The dynamic response of the sensors towards hydrogen at different temperatures has also been studied. At 530°C, voltage shift of 310 mV for 1% hydrogen was observed.

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