OPTICAL PROBE CURRENT SENSOR MODULE USING THE KERR EFFECT OF EXCHANGE-COUPLED MAGNETIC FILM AND ITS APPLICATION TO IGBT SWITCHING CURRENT MEASUREMENTS

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International Journal on Smart Sensing and Intelligent Systems

Professor Subhas Chandra Mukhopadhyay

Exeley Inc. (New York)

Subject: Computational Science & Engineering , Engineering, Electrical & Electronic

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eISSN: 1178-5608

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VOLUME 5 , ISSUE 2 (June 2012) > List of articles

OPTICAL PROBE CURRENT SENSOR MODULE USING THE KERR EFFECT OF EXCHANGE-COUPLED MAGNETIC FILM AND ITS APPLICATION TO IGBT SWITCHING CURRENT MEASUREMENTS

K. Ogawa * / S. Suzuki / M. Sonehara / T. Sato / K. Asanuma

Keywords : Current sensor, Optical probe, Magneto-optical Kerr effect, Exchange-coupled film, EV/HEV

Citation Information : International Journal on Smart Sensing and Intelligent Systems. Volume 5, Issue 2, Pages 347-361, DOI: https://doi.org/10.21307/ijssis-2017-485

License : (CC BY-NC-ND 4.0)

Received Date : 31-March-2012 / Accepted: 08-May-2012 / Published Online: 01-June-2012

ARTICLE

ABSTRACT

An optical probe current sensor module using the Kerr effect of exchange-coupled magnetic film has been fabricated and applied to switching current measurements for IGBT used for the DC-DC converter and the DC-AC inverter of EV/HEV. Since the sensor module using the Kerr effect of the single domain exchange-coupled magnetic film utilizes magnetization rotation only, Barkhausen noise due to domain wall pinning can be excluded. The current sensor consists of a Laser-diode, a polarizer, a Fe-Si/Mn-Ir exchange-coupled film, a quarter-wavelength plate, PIN Photodiodes and a differential amplifier. The current sensor has a current measurement range of ±60 A and a frequency range of DC-200 kHz. The switching current of IGBT has been measured by it.

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