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Citation Information : International Journal on Smart Sensing and Intelligent Systems. Volume 5, Issue 3, Pages 592-605, DOI: https://doi.org/10.21307/ijssis-2017-497
License : (CC BY-NC-ND 4.0)
Received Date : 03-July-2012 / Accepted: 01-August-2012 / Published Online: 01-September-2012
MoO3 thin films have been prepared by a simple spray pyrolysis technique at substrate temperature 250oC. The structure and morphology of thin films are characterized by X-ray powder diffraction (XRD), scanning electron microscopy and UV-vis spectroscopy. The gas sensing properties of MoO3 thin film is studied at gas concentration 400 ppm and working temperature of 100–400 oC. It was found that the sensitivity depended on the working temperatures and also H2S gas concentration. The results show that the MoO3 thin film can be used to fabricate high performance H2S gas sensors.
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