Annealing Effect on the Structural and Optical properties of SiOx films deposited by HFCVD


Share / Export Citation / Email / Print / Text size:

International Journal on Smart Sensing and Intelligent Systems

Professor Subhas Chandra Mukhopadhyay

Exeley Inc. (New York)

Subject: Computational Science & Engineering, Engineering, Electrical & Electronic


eISSN: 1178-5608



VOLUME 7 , ISSUE 5 (December 2014) > List of articles

Special issue ICST 2014

Annealing Effect on the Structural and Optical properties of SiOx films deposited by HFCVD

J. A. Luna López / A. Benítez Lara / G. García Salgado / D. Hernández de la Luz / M. Pacio / A. Morales Sanchez / S. A. Perez Garcia

Keywords : SiOx; HFCVD; photoluminiscence; FTIR; XPS; SEM; UV/Vis spectroscopy

Citation Information : International Journal on Smart Sensing and Intelligent Systems. Volume 7, Issue 5, Pages 1-6, DOI:

License : (CC BY-NC-ND 4.0)

Published Online: 15-February-2020



Non-stoichiometric silicon oxide (SiOx) with embedded Si nanoparticles (Si-nps) shows novel physical characteristic, which permits its use in optoelectronic devices as photodetectors and light emitters. In this work, a detailed analysis of the structural and optical properties of silicon rich oxide films deposited via hot filament chemical vapor deposition is done. SiOx films with different Si content were obtained at different hydrogen flow. FTIR spectra show vibrational bands related to the presence of hydrogen in as-deposited SiOx films. This band is more intense as the hydrogen flow is increased, but disappears after thermal annealing. SiOx films exhibit a broad photoluminiscence (PL) spectra with main peaks at 700 and 750 nm. The PL band at 700 nm is enhanced as the hydrogen content in the SiOx films is increased. XPS spectra show a high Si concentration and a low oxygen concentration in the SiOx films. Transmittance spectra have a shifted to high wavelength after thermal annealing, and optical band gap was from 2.34 to 3.95 eV.

Content not available PDF Share



[1] M. Nayfeh, S. Rao, N. Barry, J. Therrien, G. Belomoin, A. Smith, and S. Chaieb,  “Observation of laser oscillation in aggregates of ultrasmall silicon nanoparticles”, Appl. Phys. Lett., vol. 80, pp 1249-1251, 2002.

[2] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò and F. Priolo, “Optical gain in silicon nanocrystals”, Nature, 480, 440-444, 2000.

[3] K. Luterová, I. Pelant, I. Mikulskas, R. Tomasiunas, D. Muller, J.-J. Grob, J.-L. Rehspringer and B. Hönerlage ” Stimulated emission in blueemitting Si+-implanted SiO2 films” , J. Appl. Phys., vol. 91, pp 28962900, 2002.

[4] G. G. Siu, X. L. Wu, Y. Gu and X. M. Bao, “Ultraviolet and blue emission from crystalline SiO2 coated with LiNbO3 and LiTaO3 “, Appl. Phys. Lett., vol. 74, pp 1812-1814, 1999.

[5] Hideki Tamura, Markus Rückschloss, Thomas Wirschem and Stan Vepřek, “Origin of the green/blue luminescence from nanocrystalline silicon”  Appl. Phys. Lett., vol. 65, pp 1537-1539, 1994.

[6] A. J. Kenyon, P. F. Trwoga, C. W. Pitt and G. Rehm, ͆The origin of photoluminescence from thin films of silicon̺rich silica͇,  J. Appl. Phys., vol. 79, pp 9291-9300, 1996.

[7] Gong-Ru Lin, Chun-Jung Lin, Chi-Kuan Lin, Li-Jen Chou and Yu-Lun Chueh, ”Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2” J. Appl. Phys., vol. 97, 094306, 2005.

[8] X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai and W. D. Song “Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient” J. Appl. Phys., vol. 93, pp 6311-6319, 2003.

[9] O. Hanaizumi, K. Ono, and Y. Ogawa, “Blue-light emission from sputtered Si:SiO2 films without annealing”, Appl. Phys. Lett, vol.82, pp.538-540, 2003.

[10] Kenji Kohno, Yukio Osaka, Fumitaka Toyomura1 and Hideyuki Katayama, “Photoluminescence of Si Microcrystals Embedded in SiO2 Glass Films” Jpn. J. Appl. Phys., vol. 33, pp 6616-6622, 1994.

[11] Y. C. Fang, W. Q. Li, L. J. Qi, L. Y. Li, Y. Y. Zhao, Z. J. Zhang, and M. Lu, “Photoluminescence from SiOx thin films: effects of film thickness and annealing temperature”  Nanotechnology, vol.15, pp.495-500, 2004.

[12] D.Dong, E. A. Irene and D. R. Young, “Preparation and Some Properties of Chemically Vapor̺Deposited Si̺Rich SiO2 and Si3 N 4 Films” J. Electrochem. Soc., vol.125, pp.819-823, 1978 .

[13] P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, “Infrared spectroscopic study of SiO x films produced by plasma enhanced chemical vapor deposition” J. Vac. Sci. Technol. A, 4, pp 689-694, (1986).

[14] Pereyra, Alayo, “On the nitrogen and oxygen incorporation in plasmaenhanced chemical vapor deposition (PECVD) SiOxNy films”  Thin solid Films, vol. 402, pp 154-161, 2002.

[15] Shinji Hayashi, Shinichi Tanimoto, and Keiichi Yamamoto “Analysis of surface oxides of gasevaporated Si small particles with infrared spectroscopy, high resolution electron microscopy, and xray photoemission spectroscopy”. J Appl Phys, vol. 68, pp 5300-5308, 1990.

[16] L.B. Ma, A. L. Ji, C. Liu, Y. Q. Wang, and Z. X. Cao,” Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible photoluminescence” J Vac Sci Technol B, vol. 22, pp 2654-2657, 2004.

[17] F. Iacona, G. Franzo, and C. Spinella, ”Correlation between luminescence and structural properties of Si nanocrystals”. J Appl Phys vol. 87, pp 1295-1303, 2000.

[18] F. Iacona, C. Borgiono, and C. Spinella, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films”. J Appl Phys, vol. 95, pp 3723-3732, 2004.

[19] J. A. Luna López, J. C. López, D.E.V. Valerdi, G.G. Salgado, T. DíazBecerril, a P. Pedraza, and F.J.F. Gracia, “Morphological, compositional, structural, and optical properties of Si-nc embedded in SiO x films” Nanoscale Res. Lett., vol 7, pp 604-614, 2012.

[20] Pankove J, Optical Processes in Semiconductors, Englewood Cliffs, New Jersey, Prentice Hall, 1971.