SEARCH WITHIN CONTENT
Citation Information : International Journal of Advanced Network, Monitoring and Controls. Volume 2, Issue 4, Pages 56-60, DOI: https://doi.org/10.1109/iccnea.2017.91
License : (CC BY-NC-ND 4.0)
Published Online: 09-April-2018
A micromechanical silicon resonant accelerometer (MSRA) is a potential micro accelerometer with high accuracy. One of the most important factors affecting its performance is temperature. To research the effect of temperature on micromechanical silicon resonant accelerometer, this study based on the original micromechanical silicon resonant accelerometer, designs a chip-level temperature-sensitive structure which a pair of temperature resonators is arranged on both sides of the force resonator of the original accelerometer to ensure symmetry of the MSRA, as well as compares and selects the appropriate structure, fundamental frequency, and size. The ANSYS simulation is used to verify the rationality of the structure design. The MSRA is fabricated using the Deep Dry Silicon on Glass technique and packaged in metal shell, a measurement circuit is designed and a full temperature test is conducted. The results show that the resonant frequency of the temperature resonator is strongly sensitive to temperature changes but not sensitive to acceleration, and that it can reflects temperature change in the package cavity. Therefore, the temperature resonator can achieve accurate temperature measurement of accelerometer and can be used in temperature compensation.
Seok, Seonho, H. Kim, and K. Chun, “An inertial-grade laterally-driven MEMS differential resonant accelerometer,” Sensors, vol.2,pp.654-657,2004.
Hopkins, R., J. Miola, and R. Setterlund, “The silicon oscillating accelerometer: A high-performance MEMS accelerometer for precision navigation and strategic guidance applications,” Proceedings of Annual Meeting of the Institute of Navigation, pp.1043-1052, 2005.
Hyeon Cheol Kim, Seonho Seok, Ilwhan Kim, Soon-Don Choi, and Kukjin Chun, “Inertial-grade out-of-plane and in-plane differential resonant silicon accelerometers (DRXLs),” in Proc. 13th Tntemational Conference on Solid-state Sensors, Actuators and Microsystems, pp.172-175, 2005.
Chul Hyun, Jang Gyu Lee, and Taesam Kang, “ Precise oscillation loop for a resonant type MEMS inertial sensors,”in Proc. SICE-ICASE International Joint Conference, pp.1953-1958, 2006.
He L, Xu YP, and PalaniapanM, “A cmos readout circuit for soi resonant accelerometer with 4μg bias stability and 20-μg/√Hz resolution, ” IEEE J Solid-State Circuits,vol.43, 2008, pp.1480-1490.
Falconi C, Fratini M, “CMOS microsystems temperature control,” Sensors & Actuators B Chemical,vol. 129, 2008, pp.59-66.
Anping Qiu, Jinhu Dong, “Temperature Effect and Compensation of Silicon Micro Resonance Accelerometer ,” Nanotechnology and Precision, vol.10, 2012, pp.215-219.
Wei Wang, Yan Wang, Haihan Zhuang, Chaoyang Xing, “Temperature Characteristics of Silicon Micro Resonance Accelerometer ,” Journal of Chinese Inertial Technology, 2013, pp.255-258.
Fan Wang, Jingxin Dong, Shuming Zhao, Bin Yan, “Microstructure and Process Design of Anti-temperature Drift of Silicon Micro-vibrating Beam Accelerometer,” Journal of Chinese Inertial Technology, 2014.
Guoming Xia, Anping Qiu, Qin Shi, Jing Zhang, Yan Su,and Henggao Ding, “A micro silicon resonant accelerometer based on chip intergrated precision temperature structure,”2013.
Fan Wang, Jingxin Dong, Shuming Zhao, “Micro silicon resonant accelerometer temperature sense and closed-loop control,” Optics and Precision Engineering, vol.22, 2014, pp.1590-1597.