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  • In Jour Smart Sensing And Intelligent Systems

 

Article | 01-June-2016

CHARACTERIZATION OF PHOTODECTORS USING A MONOCHROMATOR AND A BROADBAND LIGHT SOURCE IN THE XYZ COLOR SPACE

Photodetectors are sensors, which respond to the electromagnetic radiation of the spectrum. Their spectral response depends on many factors of the manufacturing process, e.g. the type of diode that is used or, in some cases, the optical elements that are added to limit the response band. In this paper, we propose an experimental methodology to obtain the spectral response of a photodetector by constructing the characteristic curve using the monochromatic response. For this purpose, we use a

J.-S. Botero V., F.-E. López G., J.-F. Vargas B.

International Journal on Smart Sensing and Intelligent Systems, Volume 9 , ISSUE 2, 752–764

Research Article | 17-September-2018

Calibration Method for the Wavelength and Uniformity of Pixel Response in Photodetector Arrays

Digital cameras are photodetector arrays that respond to particular bands of the electromagnetic spectrum, and specifically those in the visible spectrum between 380 and 780 nm are the most commonly used. The main cameras function is store the image from an aesthetic point of view, when these are used in home applications. For this reason, several processes are used in image reconstruction to improve the visual appearance, even from the manufacturing process of sensor decreasing the possibility

J.-S. Botero-Valencia, J. Valencia-Aguirre, D.A. Marquez-Viloria, J.-F. Vargas-Bonilla, A. Gallardo-del Angel

International Journal on Smart Sensing and Intelligent Systems, Volume 11 , ISSUE 1, 1–8

Research paper | 01-September-2011

0.35 μm CMOS OPTICAL SENSOR FOR AN INTEGRATED TRANSIMPEDANCE CIRCUIT

This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is used for enhancing the bandwidth. The proposed structure operates at a data rate of 10 Gb/s with a BER of 10-20 and was implemented in a 0.35 μm CMOS process. The integrated photodiode has a capacitance of 0.01 pF which permits to the structure to achieve a wide bandwidth (5.75 GHz) with only one inductor before the last stage; hence a

H. Escid, M. Attari, M. Ait aidir, W. Mechti

International Journal on Smart Sensing and Intelligent Systems, Volume 4 , ISSUE 3, 467–481

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